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FFPF60B150DS
FFPF60B150DS
Features
* High voltage and high reliability * High speed switching Modulation diode / Damper diode * Low conduction loss Modulation diode / Damper diode TO-220F
Applications
* (Modulation + Damper) diode designed for horizontal deflection circuits in C-TVs & monitors
1
2
3
Damper
Modulation
DAMPER + MODULATION DIODE
Absolute Maximum Ratings (Modulation) TC=25C unless otherwise noted
Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 600 20 120 - 65 to +150 Units V A A C
Absolute Maximum Ratings (Damper) TC=25C unless otherwise noted
Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 1500 6 60 - 65 to +150 Units V A A C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case Value 3.3 Units C/W
(c)2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
FFPF60B150DS
Electrical Characteristics*(Modulation) TC=25 C unless otherwise noted
Symbol VFM Parameter Maximum Instantaneous Forward Voltage IF = 20A IF = 20A IRM Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =20A, di/dt = 200A/s) TC = 25 C TC = 100 C TC = 25 C TC = 100 C Min. Typ. Max. Units V
2.2 2.0 A 10 100 90 8 360 ns A nC
trr Irr Qrr
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
Electrical Characteristics*(Damper) TC=25 C unless otherwise noted
Symbol VFM Parameter Maximum Instantaneous Forward Voltage IF = 6A IF = 6A IRM Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1.0A, di/dt = 50A/s) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/s) Maximum Forward Recovery Voltage TC = 25 C TC = 100 C TC = 25 C TC = 100 C Min Typ Max Units V
1.6 1.4 A 7 60 170 350 17 ns ns V
trr tfr VFRM
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
(c)2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
FFPF60B150DS
Typical Characteristics
40
50
Forward Current , IF [A]
[A] Forward Current , I
10
TC = 100 C
o
10
F
TJ = 125 C
o
TC = 25 C
1
o
1
TJ = 25 C
o
0.1 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.1 0.0
0.4
0.8
1.2
1.6
2.0
Forward Voltage , VF [V]
Forward Voltage , VF [V]
Figure 1. Typical Forward Characteristics (Modulation Diode)
1000
Figure 2. Typical Forward Characteristics (Damper Diode)
100
[uA]
TC = 100 C
10
o
[A]
100
10
R
Reverse Current , I
TJ = 125 C
1
1
TC = 25 C
0.1
o
Reverse Current , I
R
o
0.1
TJ = 100 C
o
o
0.01
0.01
TJ = 25 C
0.001 100 200 300 400 500 600
0.001 0 300 600 900 1200 1500
Reverse Voltage , VR [V]
Reverse Voltage , VR [V]
Figure 3. Typical Reverse Current vs. Reverse Voltage (Modulation Diode)
200 120
Figure 4. Typical Reverse Current vs. Reverse Voltage (Damper Diode)
Typical Capacitance at 0V = 178 pF
100
Typical Capacitance at 0V = 100 pF
Capacitance , Cj [pF]
Capacitance , Cj [pF]
1 10 100
150
80
100
60
40
50
20
1 0.1
0 0.1
1
10
100
Reverse Voltage , VR [V]
Reverse Voltage , VR [V]
Figure 5. Typical Junction Capacitance (Modulation Diode)
(c)2001 Fairchild Semiconductor Corporation
Figure 6. Typical Junction Capacitance (Damper Diode)
Rev. A, March 2001
FFPF60B150DS
Typical Characteristics
100 400
Reverse Recovery Time , t rr [ns]
90
[ns]
IF = 20A o TC = 25 C
di/dt = 50A/s
300
80
Reverse Recovery Time , t
rr
70
200
60
di/dt = 100A/s
100
50
40 100
0 500 1 2 3 4 5 6 7 8 9 10
di/dt [A/us]
Forward Current , IF [A]
Figure 7. Typical Reverse Recovery Time vs. di/dt (Modulation Diode)
16
Figure 8. Typical Reverse Recovery Time vs. di/dt (Damper Diode)
10 9 8 7 6
Reverse Recovery Current , Irr [A]
14 12 10 8 6 4 2 0 100
IF = 20A o TC = 25 C
Average Forward Current , I
F(AV)
[A]
DC
5 4 3 2 1 0 80 100 120
o
500
140
160
di/dt [A/us]
Case Temperature , TC [ C]
Figure 9. Typical Reverse Recovery Current vs. di/dt (Modulation Diode)
30
Figure 10. Forward Current Derating Curve (Damper Diode)
F(AV)
[A] Average Forward Current , I
25
20
DC
15
10
5
0 60
80
100
120
o
140
160
Case Temperature , TC [ C]
Figure 11. Forward Current Derating Curve (Modulation Diode)
(c)2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Package Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
Rev. A, March 2001
(c)2001 Fairchild Semiconductor Corporation
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H1

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